{"id":494,"date":"2026-07-06T14:20:09","date_gmt":"2026-07-06T05:20:09","guid":{"rendered":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/?page_id=494"},"modified":"2026-07-06T15:25:49","modified_gmt":"2026-07-06T06:25:49","slug":"past-presentations","status":"publish","type":"page","link":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/past-presentations\/","title":{"rendered":"Past Presentations"},"content":{"rendered":"\n<div class=\"wp-block-columns has-background is-layout-flex wp-container-core-columns-is-layout-7387b849 wp-block-columns-is-layout-flex\" style=\"background:linear-gradient(90deg,rgb(66,66,66) 29%,rgb(37,37,37) 29%)\">\n<div class=\"wp-block-column is-layout-flow wp-container-core-column-is-layout-5185c3d0 wp-block-column-is-layout-flow\" style=\"flex-basis:20%\">\n<div class=\"wp-block-group is-nowrap is-layout-flex wp-container-core-group-is-layout-83fdb90e wp-block-group-is-layout-flex\">\n<p class=\"wp-block-paragraph\" style=\"font-style:normal;font-weight:1000\">\u30fc<\/p>\n\n\n\n<p class=\"wp-block-paragraph\"><a href=\"#01\">International conferences<\/a><\/p>\n<\/div>\n\n\n\n<div class=\"wp-block-group is-nowrap is-layout-flex wp-container-core-group-is-layout-83fdb90e wp-block-group-is-layout-flex\">\n<p class=\"wp-block-paragraph\" style=\"font-style:normal;font-weight:1000\">\u30fc<\/p>\n\n\n\n<p class=\"wp-block-paragraph\"><a href=\"#02\">Domestic conferences<\/a><\/p>\n<\/div>\n\n\n\n<div style=\"height:30px\" aria-hidden=\"true\" class=\"wp-block-spacer\"><\/div>\n\n\n\n<div class=\"wp-block-buttons is-content-justification-left is-layout-flex wp-container-core-buttons-is-layout-a72fc229 wp-block-buttons-is-layout-flex\" style=\"padding-top:0;padding-bottom:0\">\n<div class=\"wp-block-button is-style-outline is-style-outline--1\"><a class=\"wp-block-button__link has-small-font-size has-custom-font-size wp-element-button\" href=\"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/presentations\/\" style=\"border-top-left-radius:0px;border-top-right-radius:0px;border-bottom-left-radius:0px;border-bottom-right-radius:0px;padding-top:var(--wp--preset--spacing--20);padding-right:var(--wp--preset--spacing--30);padding-bottom:var(--wp--preset--spacing--20);padding-left:var(--wp--preset--spacing--30)\">Presentations from 2017<\/a><\/div>\n<\/div>\n<\/div>\n\n\n\n<div class=\"wp-block-column is-layout-flow wp-block-column-is-layout-flow\" style=\"flex-basis:80%\">\n<div style=\"height:10px\" aria-hidden=\"true\" class=\"wp-block-spacer\"><\/div>\n\n\n\n<h2 class=\"wp-block-heading\"><strong><strong>International conferences<\/strong><\/strong><\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li><strong>M. Inaba<\/strong>, K. Suzuki, Y. Hirano, W. Norimatsu, M. Kusunoki,&nbsp;H. Kawarada, &#8220;Schottky barrier height lowering at silicon carbide by carbon nanotubes&#8221; 16th International Conference on Silicon Carbide and Related Materials (ICSCRM2015), Giardini Naxos, Italy, 4-9 Oct. 2015.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, H. Yamano, K. Kato, T. Kageura, M. Shibata, S. Onoda, T. Teraji, J. Isoya, T. Tanii, H. Kawarada, &#8220;Diamond surface fluorescence for device sensing&#8221; Diamond Quantum Sensing Workshop 2015, Takamatsu, Japan, Aug.5-7, 2015.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, K. Suzuki, M. Shibuya, C.-Y. Lee, Y. Masuda, N. Tomatsu, A. Hiraiwa, M. Kusunoki, H. Kawarada, &#8220;Low Schottky barrier height at carbon nanotube and silicon carbide interface for power electronic devices&#8221; NT15: The Sixteenth International Conference on the Science and Application of Nanotubes, Nagoya University, Nagoya, Japan, 29 June- 3 July, 2015.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, Y. Hirano, M. Shibata, K. Suzuki, C.-Y. Lee, M. Myodo, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H. Kawarada, &#8220;Carbon nanotube synthesis by non-catalytic CVD from dense carbon nanotube forest&#8221; 9th International Conference on New Diamond and Nano Carbons, Shizuoka, Japan, 24- 28 May 2015.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, C.-Y. Lee, K. Suzuki, Y. Hirano, M. Shibuya, M. Myodo, W. Norimatsu, M. Kusunoki, H. Kawarada, \u201cIn-plane conductivity of dense CNT forest formed on Silicon carbide and contact resistivity estimation of parallel adjacent CNT\u201d 9th International Conference on New Diamond and Nano Carbons, Shizuoka, Japan, 24- 28 May 2015.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, C.-Y. Lee, K. Suzuki, M. Shibuya, M. Myodo, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H. Kawarada, &#8220;In-plane conductivity of dense carbon nanotube forest formed by silicon carbide surface decomposition method&#8221; IUMRS-ICA2014, International Union of Materials Research Societies, International Conference in Asia 2014 (The 15th IUMRS-ICA), Fukuoka, Japan, 24-30 August 2014.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, C.-Y. Lee, K. Suzuki, M. Shibuya, M. Myodo, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H. Kawarada, &#8220;In-plane Conduction of Dense Carbon Nanotube Forest Formed on Silicon Carbide&#8221; NT14: The Fifteenth International Conference on the Science and Application of Nanotubes, University of Southern California, Los Angeles, CA, USA, 2-6 June, 2014.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, M. Shibuya, Y. Masuda, A. Hiraiwa, M. Kusunoki, H. Kawarada, &#8220;Evaluation of CNT forest\/metal contact resistivity for LSI metallization application&#8221; International Conference on Diamond and Carbon Materials, Riva del Garda, Italy, 2-5 Sep. 2013.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, M. Shibuya, Y. Masuda, A. Hiraiwa, M. Kusunoki, H. Kawarada, &#8220;Estimation of conduction at CNT\/SiC interface of vertically aligned and high density CNT on SiC&#8221; NT13: The Fourteenth International Conference on the Science and Application of Nanotubes, Espoo, Finland, Jun. 2013.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, M. Shibuya, K. Oohara, T. Ochiai, Y. Masuda, A. Hiraiwa, M.Kusunoki, H. Kawarada, \u201dContact resistivity evaluation of dense CNT forest using conductive AFM\u201d 2012 MRS Fall Meeting &amp; Exhibit, Boston, MA, USA, Nov. 2012.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, K. Oohara, T. Ochiai, N. Tomatsu, A. Hiraiwa, M. Kusunoki, H. Kawarada, &#8220;CNT contact resistivity evaluation from nano size LSI via to power SiC device using conductive AFM&#8221; IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012), Yokohama, Japan, Sep. 2012.<\/li>\n<\/ul>\n\n\n\n<div style=\"height:50px\" aria-hidden=\"true\" id=\"02\" class=\"wp-block-spacer\"><\/div>\n\n\n\n<h2 class=\"wp-block-heading\"><strong><strong>Domestic conferences<\/strong><\/strong><\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li><strong>M. Inaba,<\/strong>&nbsp;H. Kawarada, Y. Ohno, &#8220;\u771f\u7a7a\u30ae\u30e3\u30c3\u30d7\u30b2\u30fc\u30c8\u69cb\u9020\u306b\u3088\u308b2\u6b21\u5143\u6b63\u5b54\u30ac\u30b9\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u30c7\u30d0\u30a4\u30b9\u306e\u8a55\u4fa1&#8221;&nbsp;\u7b2c32\u56de\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, \u96fb\u6c17\u901a\u4fe1\u5927\u5b66, \u6771\u4eac\u90fd\u8abf\u5e03\u5e02, 2018\u5e7411\u670814\u65e5-16\u65e5. (\u30dd\u30b9\u30bf\u30fc)<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, H. Uchiyama, H. Hoshino, W. Fei, H. Kawarada, Y. Ohno, &#8220;\u30ea\u30e2\u30fc\u30c8\u30d7\u30e9\u30ba\u30deCVD\u306b\u3088\u308b\u9ad8\u5747\u4e00\u5438\u7740\u30ca\u30ce\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u304b\u3089\u306e\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u819c\u306e\u5f62\u6210&#8221; \u7b2c31\u56de\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0,&nbsp;\u95a2\u897f\u5b66\u9662\u5927\u5b66\u897f\u5bae\u4e0a\u30f6\u539f\u30ad\u30e3\u30f3\u30d1\u30b9,&nbsp;\u5175\u5eab\u770c\u897f\u5bae\u5e02, 2017\u5e7411\u670820\u65e5-22\u65e5.(\u30dd\u30b9\u30bf\u30fc)<\/li>\n\n\n\n<li><strong>M. Inaba,<\/strong>&nbsp;H. Kawarada, &#8220;Off resistivity evaluation of carbon nanotube electrolyte solution gate FETs&#8221; The 53rd Fullerenes-Nanotubes-Graphene General Symposium, Kyoto, Japan, Sept. 2017. (Poster)<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, H. Kawarada, &#8220;\u30ab\u30fc\u30dc\u30f3\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6\u30d5\u30a9\u30ec\u30b9\u30c8\u30c1\u30e3\u30cd\u30eb\u96fb\u89e3\u8cea\u6eb6\u6db2\u30b2\u30fc\u30c8FET\u306e\u30aa\u30d5\u62b5\u6297&#8221; \u7b2c78\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u798f\u5ca1\u56fd\u969b\u4f1a\u8b70\u5834\u30fb\u56fd\u969b\u30bb\u30f3\u30bf\u30fc\u30fb\u798f\u5ca1\u30b5\u30f3\u30d1\u30ec\u30b9(\u798f\u5ca1), 2017\u5e749\u67085\u65e5-8\u65e5. (\u53e3\u982d)<\/li>\n\n\n\n<li><strong>\u7a32\u8449 \u512a\u6587<\/strong>\uff0c\u95a2 \u7ae0\u61b2\uff0c\u4f50\u85e4 \u548c\u660e\uff0c\u6adb\u7530 \u77e5\u7fa9\uff0c\u5e73\u5ca9 \u7be4\uff0c\u5ddd\u539f\u7530 \u6d0b, &#8220;\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u3078\u306e\u30a4\u30aa\u30f3\u6ce8\u5165\u30fb\u9ad8\u6e29\u30a2\u30cb\u30fc\u30eb\u306b\u3088\u308b\u8868\u9762\u5f62\u6210\u7269&#8221; \u7b2c30\u56de\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, \u6771\u4eac\u5927\u5b66\u99d2\u5834\u30ea\u30b5\u30fc\u30c1\u30ad\u30e3\u30f3\u30d1\u30b9\u30b3\u30f3\u30d9\u30f3\u30b7\u30e7\u30f3\u30db\u30fc\u30eb, 2016\u5e7411\u6708.<\/li>\n\n\n\n<li><strong>\u7a32\u8449 \u512a\u6587<\/strong>, \u4e94\u5341\u5d50 \u572d\u70ba, \u6962\u6751 \u5353\u6717, \u963f\u90e8 \u4fee\u5e73, \u67f4\u7530 \u5c06\u66a2, \u65b0\u8c37 \u5e78\u5f18, \u5e73\u5ca9 \u7be4, \u5ddd\u539f\u7530 \u6d0b, \u201d\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u96fb\u89e3\u8cea\u6eb6\u6db2\u30b2\u30fc\u30c8FET\u306e\u3057\u304d\u3044\u5024\u201d \u7b2c77\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u6731\u9dfa\u30e1\u30c3\u30bb, 2016\u5e749\u6708.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, K. Igarashi, T. Naramura, S. Abe, M. Shibata, Y. Shintani, A. Hiraiwa, H. Kawarada, &#8220;Threshold shift of diamond electrolyte-solution gate field-effect transistor by anodic oxidation&#8221; \u7b2c51\u56de\u30d5\u30e9\u30fc\u30ec\u30f3\u30fb\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6\u30fb\u30b0\u30e9\u30d5\u30a7\u30f3\u7dcf\u5408\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, \u304b\u3067\u308b2\uff657, \u672d\u5e4c\u5e02, 2016\u5e749\u6708.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, T. Muta, M. Kobayashi, D. Matsumura, T. Saito, T. Kudo, A. Hiraiwa, H. Kawarada, &#8220;Vertical Type Hydrogen Terminated Diamond MOSFETs&#8221; \u7b2c35\u56de\u96fb\u5b50\u6750\u6599\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, \u30e9\u30d5\u30a9\u30fc\u30ec\u7435\u7436\u6e56(\u6ecb\u8cc0), 2016\u5e747\u6708.\uff08EMS\u8cde\uff09<\/li>\n\n\n\n<li><strong>\u7a32\u8449 \u512a\u6587<\/strong>, \u8cbb \u6587\u831c, \u5e73\u91ce \u512a, \u9234\u6728 \u548c\u771f, \u5ddd\u539f\u7530 \u6d0b, \u201d\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u3078\u306e\u9ad8\u6e29\u30a2\u30cb\u30fc\u30eb\u306b\u3088\u308a\u4f5c\u88fd\u3057\u305f\u5782\u76f4\u914d\u5411\u30b0\u30e9\u30d5\u30a1\u30a4\u30c8\u201d \u7b2c63\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u6771\u4eac\u5de5\u696d\u5927\u5b66, 2016\u5e743\u6708.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, W. Fei, Y. Hirano, K. Suzuki, H. Kawarada, &#8220;Vertically oriented Graphite layer formed on hot-implanted diamond, (100) surface&#8221; \u7b2c50\u56de \u30d5\u30e9\u30fc\u30ec\u30f3\u30fb\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6\u30fb\u30b0\u30e9\u30d5\u30a7\u30f3\u7dcf\u5408\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, \u6771\u4eac\u5927\u5b66, 2016\u5e742\u6708.<\/li>\n\n\n\n<li><strong>\u7a32\u8449 \u512a\u6587<\/strong>, \u674e \u667a\u5b87, \u9234\u6728 \u548c\u771f, \u5e73\u91ce \u512a, \u8cbb \u6587\u831c, \u4e57\u677e \u822a, \u6960 \u7f8e\u667a\u5b50, \u5ddd\u539f\u7530 \u6d0b, \u201d\u30ab\u30fc\u30dc\u30f3\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6\u9593\u306e\u63a5\u89e6\u62b5\u6297\u201d, \u7b2c76\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u540d\u53e4\u5c4b\u56fd\u969b\u4f1a\u8b70\u5834(\u611b\u77e5), 2015\u5e749\u6708.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, W. Norimatsu, M. Kusunoki, H. Kawarada, &#8220;Contact resistivity evaluation of parallel adjacent CNTs from in-plane conductivity of dense CNT forest on silicon carbide&#8221; \u7b2c49\u56de \u30d5\u30e9\u30fc\u30ec\u30f3\u30fb\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6\u30fb\u30b0\u30e9\u30d5\u30a7\u30f3\u7dcf\u5408\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, \u5317\u4e5d\u5dde\u56fd\u969b\u4f1a\u8b70\u5834(\u798f\u5ca1), 2015\u5e749\u6708.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, K. Suzuki, Y. Hirano, W. Norimatsu, M. Kusunoki, H. Kawarada, &#8220;Electrical contact of carbon nanotube and silicon carbide interface&#8221; \u7b2c34\u56de\u96fb\u5b50\u6750\u6599\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0 (The 34th Electronic Materials Symposium), \u30e9\u30d5\u30a9\u30fc\u30ec\u7435\u7436\u6e56(\u6ecb\u8cc0), 2015\u5e747\u6708.<\/li>\n\n\n\n<li><strong>\u7a32\u8449 \u512a\u6587<\/strong>, \u674e \u667a\u5b87, \u9234\u6728 \u548c\u771f, \u6e0b\u8c37 \u6075,&nbsp; \u660e\u9053 \u4e09\u7a42, \u5e73\u91ce \u512a, \u4e57\u677e \u822a, \u6960 \u7f8e\u667a\u5b50, \u5ddd\u539f\u7530 \u6d0b, &#8220;SiC\u4e0a\u30ab\u30fc\u30dc\u30f3\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6\u30d5\u30a9\u30ec\u30b9\u30c8\u306e\u30d1\u30bf\u30fc\u30cb\u30f3\u30b0\u5f62\u6210\u306e\u305f\u3081\u306e\u8010\u8d85\u9ad8\u6e29ZnO\/C\u30de\u30b9\u30af&#8221; \u7b2c62\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u6771\u6d77\u5927\u5b66\u6e58\u5357\u30ad\u30e3\u30f3\u30d1\u30b9, 2015\u5e743\u6708.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, C.-Y. Lee, K. Suzuki, Y. Hirano, M. Shibuya, M. Myodo, W. Norimatsu, M. Kusunoki, H. Kawarada, \u201cElectrical contact of parallel adjacent CNTs estimated from in-plane conductivity of dense CNT forest on silicon carbide\u201d \u7b2c48\u56de\u30d5\u30e9\u30fc\u30ec\u30f3\u30fb\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6\u30fb\u30b0\u30e9\u30d5\u30a7\u30f3\u7dcf\u5408\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, \u6771\u4eac\u5927\u5b66, 2015\u5e742\u6708.<\/li>\n\n\n\n<li><strong>\u7a32\u8449 \u512a\u6587<\/strong>, \u674e \u667a\u5b87, \u9234\u6728 \u548c\u771f, \u6e0b\u8c37 \u6075, \u660e\u9053 \u4e09\u7a42, \u5e73\u91ce \u512a, \u5e73\u5ca9 \u7be4, \u4e57\u677e \u822a, \u6960 \u7f8e\u667a\u5b50, \u5ddd\u539f\u7530 \u6d0b, \u201dSiC\u4e0a\u306b\u5f62\u6210\u3057\u305f\u7a20\u5bc6\u30ab\u30fc\u30dc\u30f3\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6\u30d5\u30a9\u30ec\u30b9\u30c8\u306e\u9762\u5185\u65b9\u5411\u4f1d\u5c0e\u6027\u8a55\u4fa1\u201d \u7b2c75\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u5317\u6d77\u9053\u5927\u5b66, 2014\u5e749\u6708.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, C.-Y. Lee, K. Suzuki, M. Shibuya, Y. Hirano, M. Myodo, A. Hiraiwa, W. Norimatsu, M. Kusunoki, H. Kawarada, &#8220;Mask Patterning at Very High Temperature for Carbon Nanotube Forest on Silicon Carbide&#8221;, \u7b2c47\u56de\u30d5\u30e9\u30fc\u30ec\u30f3\u30fb\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6\u30fb\u30b0\u30e9\u30d5\u30a7\u30f3\u7dcf\u5408\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, \u540d\u53e4\u5c4b\u5927\u5b66, 2014\u5e749\u6708.<\/li>\n\n\n\n<li><strong>M. Inaba<\/strong>, C.-Y. Lee, K. Suzuki, M. Shibuya, A. Hiraiwa, Y. Masuda, W. Norimatsu, M. Kusunoki, H. Kawarada, &#8220;In-plane conductivity of dense carbon nanotube forest on semi-insulating silicon carbide&#8221; \u7b2c46\u56de \u30d5\u30e9\u30fc\u30ec\u30f3\u30fb\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6\u30fb\u30b0\u30e9\u30d5\u30a7\u30f3\u7dcf\u5408\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, \u6771\u4eac\u5927\u5b66, 2014\u5e743\u6708.<\/li>\n\n\n\n<li><strong>\u7a32\u8449 \u512a\u6587<\/strong>, \u6e0b\u8c37 \u6075, \u5927\u539f \u4e00\u6176, \u843d\u5408 \u62d3\u6d77, \u5897\u7530 \u4f73\u7a42,\u5e73\u5ca9 \u7be4, \u6960 \u7f8e\u667a\u5b50, \u5ddd\u539f\u7530 \u6d0b, \u201cElectrical current behavior at CNT-SiC interface\u201d \u7b2c43\u56de\u30d5\u30e9\u30fc\u30ec\u30f3\u30fb\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6\u30fb\u30b0\u30e9\u30d5\u30a7\u30f3\u7dcf\u5408\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, \u6771\u5317\u5927\u5b66, 2012\u5e749\u6708.<\/li>\n\n\n\n<li><strong>\u7a32\u8449 \u512a\u6587<\/strong>, \u5927\u539f \u4e00\u6176, \u843d\u5408 \u62d3\u6d77, \u6771\u677e \u76f4\u54c9, \u5e73\u5ca9 \u7be4, \u6960 \u7f8e\u667a\u5b50, \u5ddd\u539f\u7530 \u6d0b, &#8220;\u5c0e\u96fb\u6027AFM\u30d7\u30ed\u30fc\u30d6\u3092\u7528\u3044\u305fCNT\u3068\u91d1\u5c5e\u306e\u63a5\u89e6\u62b5\u6297\u306e\u8a55\u4fa1&#8221; \u7b2c59\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u6625\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u65e9\u7a32\u7530\u5927\u5b66, 2012\u5e743\u6708.<\/li>\n\n\n\n<li><strong>\u7a32\u8449 \u512a\u6587<\/strong>, \u5927\u539f \u4e00\u6176, \u843d\u5408 \u62d3\u6d77, \u6771\u677e \u76f4\u54c9, \u5e73\u5ca9 \u7be4, \u6960 \u7f8e\u667a\u5b50, \u5ddd\u539f\u7530 \u6d0b, \u201cContact resistivity estimation of CNT on SiC-metal contact using contact mode AFM current mapping\u201d \u7b2c42\u56de\u30d5\u30e9\u30fc\u30ec\u30f3\u30fb\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6\u30fb\u30b0\u30e9\u30d5\u30a7\u30f3\u7dcf\u5408\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, \u6771\u4eac\u5927\u5b66, 2012\u5e743\u6708.<\/li>\n\n\n\n<li><strong>\u7a32\u8449 \u512a\u6587<\/strong>, \u5927\u539f \u4e00\u6176, \u843d\u5408 \u62d3\u6d77, \u5ddd\u539f\u7530 \u6d0b, \u201cContact resistance estimation of open-end&nbsp; CNT by contact-mode AFM\u201d \u7b2c41\u56de\u30d5\u30e9\u30fc\u30ec\u30f3\u30fb\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6\u30fb\u30b0\u30e9\u30d5\u30a7\u30f3\u7dcf\u5408\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0, \u9996\u90fd\u5927\u5b66\u6771\u4eac, 2011\u5e749\u6708.<\/li>\n\n\n\n<li><strong>\u7a32\u8449 \u512a\u6587<\/strong>, \u5927\u539f \u4e00\u6176, \u843d\u5408 \u62d3\u6d77, \u5ddd\u539f\u7530 \u6d0b, &#8220;AFM\u306e\u96fb\u6d41\u30de\u30c3\u30d4\u30f3\u30b0\u3092\u7528\u3044\u305f\u958b\u7aef\u30ab\u30fc\u30dc\u30f3\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6\u306e\u63a5\u89e6\u62b5\u6297\u306e\u8a55\u4fa1&#8221; \u7b2c72\u56de\u5fdc\u7528\u7269\u7406\u5b66\u4f1a\u79cb\u5b63\u5b66\u8853\u8b1b\u6f14\u4f1a, \u5c71\u5f62\u5927\u5b66, 2011\u5e748\u6708.<\/li>\n<\/ul>\n<\/div>\n<\/div>\n\n\n\n<p class=\"wp-block-paragraph\"><\/p>\n\n\n\n<p class=\"wp-block-paragraph\"><\/p>\n","protected":false},"excerpt":{"rendered":"<p>\u30fc International conferences \u30fc Domestic conferences International conferences Domestic conferences<\/p>\n","protected":false},"author":168,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_monsterinsights_skip_tracking":false,"footnotes":""},"class_list":["post-494","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/pages\/494","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/users\/168"}],"replies":[{"embeddable":true,"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/comments?post=494"}],"version-history":[{"count":11,"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/pages\/494\/revisions"}],"predecessor-version":[{"id":510,"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/pages\/494\/revisions\/510"}],"wp:attachment":[{"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/media?parent=494"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}