Keywords (Present)<\/strong><\/h3>\n\n\n\n\n\n\nTechnology<\/strong><\/p>\n\n\n\n\n- Electrical alignment<\/li>\n\n\n\n
- Dielectrophoresis<\/li>\n\n\n\n
- High voltage<\/li>\n\n\n\n
- Device fabrication<\/li>\n\n\n\n
- High-pressure-high-temperature electrochemistry<\/li>\n<\/ul>\n<\/div>\n<\/div>\n\n\n\n\n\n
Material<\/strong><\/strong><\/p>\n\n\n\n\n- Carbon Nanotubes (CNTs)<\/li>\n\n\n\n
- Diamond<\/li>\n\n\n\n
- h-BN<\/li>\n\n\n\n
- Alumina<\/li>\n\n\n\n
- Filler materials<\/li>\n\n\n\n
- Resin<\/li>\n<\/ul>\n<\/div>\n<\/div>\n\n\n\n\n\n
Structure<\/strong><\/strong><\/p>\n\n\n\n\n- Particle<\/li>\n\n\n\n
- Whisker<\/li>\n\n\n\n
- Flake<\/li>\n\n\n\n
- Alignment<\/li>\n\n\n\n
- Composites<\/li>\n<\/ul>\n<\/div>\n<\/div>\n\n\n\n\n\n
Characterization<\/strong><\/strong><\/p>\n\n\n\n\n- Contact<\/li>\n\n\n\n
- Gas sensitivity<\/li>\n\n\n\n
- Thermal conductivity<\/li>\n\n\n\n
- Viscosity<\/li>\n\n\n\n
- Dielectric properties<\/li>\n\n\n\n
- Electrochemical properties<\/li>\n<\/ul>\n<\/div>\n<\/div>\n\n\n\n\n\n
Application<\/strong><\/strong><\/p>\n\n\n\n\n- Gas sensing device<\/li>\n\n\n\n
- High functional composites<\/li>\n\n\n\n
- Electrochemical sensor<\/li>\n<\/ul>\n<\/div>\n<\/div>\n<\/div>\n\n\n\n<\/div>\n\n\n\n
Keywords (Previous)<\/strong><\/h3>\n\n\n\n\n\n\nMaterial<\/strong><\/strong><\/p>\n\n\n\n\n- Carbon Nanotubes (CNTs)<\/li>\n\n\n\n
- Diamond<\/li>\n\n\n\n
- Graphite<\/li>\n\n\n\n
- Silicon Carbide (SiC)<\/li>\n<\/ul>\n<\/div>\n<\/div>\n\n\n\n\n\n
Structure<\/strong><\/strong><\/strong><\/p>\n\n\n\n\n- Vertical<\/li>\n\n\n\n
- Horizontal<\/li>\n<\/ul>\n<\/div>\n<\/div>\n\n\n\n\n\n
Characterization<\/strong><\/strong><\/strong><\/p>\n\n\n\n\n- Contact<\/li>\n\n\n\n
- Threshold voltage<\/li>\n\n\n\n
- Mobility<\/li>\n<\/ul>\n<\/div>\n<\/div>\n\n\n\n\n\n
Application<\/strong><\/strong><\/strong><\/p>\n\n\n\n\n- Power device<\/li>\n\n\n\n
- Sensing device<\/li>\n<\/ul>\n<\/div>\n<\/div>\n<\/div>\n\n\n\n<\/div>\n\n\n\n
Composite Application of Diamond<\/strong><\/h3>\n\n\n\n\n\n\n\n\n\nHeat conduction sheets with electrically aligned diamond fillers<\/h4>\n\n\n\n
\u96fb\u529b\u99c6\u52d5\u7cfb\u306e\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u9ad8\u6027\u80fd\u5316\u3001\u9ad8\u96c6\u7a4d\u5316\u306b\u4f34\u3044\u3001\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u306e\u767a\u71b1\u304c\u554f\u984c\u306b\u306a\u3063\u3066\u3044\u308b\u3053\u3068\u304b\u3089\u3001\u5c0f\u3055\u3044\u7d20\u5b50\u304b\u3089\u52b9\u7387\u3088\u304f\u71b1\u3092\u9003\u304c\u3059\u3001\u30b5\u30fc\u30de\u30eb\u30de\u30cd\u30b8\u30e1\u30f3\u30c8\u306e\u91cd\u8981\u6027\u304c\u5897\u3057\u3066\u3044\u307e\u3059\u3002\u73fe\u5728\u3001\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u5411\u3051\u306e\u653e\u71b1\u6750\u6599\u3068\u3057\u3066\u3001\u767a\u71b1\u4f53\u3068\u30d2\u30fc\u30c8\u30b7\u30f3\u30af\u306e\u9593\u306b\u633f\u5165\u3059\u308b\u3001\u5f3e\u6027\u6a39\u8102\u306b\u71b1\u4f1d\u5c0e\u30d5\u30a3\u30e9\u30fc\u3092\u8907\u5408\u3057\u305f\u653e\u71b1\u30b7\u30fc\u30c8\u3092\u3001\u96fb\u754c\u6574\u5217\u306b\u3088\u308a\u9ad8\u6027\u80fd\u5316\u3059\u308b\u7814\u7a76\u3092\u63a8\u9032\u3057\u3066\u3044\u307e\u3059\u3002\u305d\u306e\u4e2d\u3067\u96fb\u754c\u6574\u5217\u306b\u304a\u3044\u3066\u8ab2\u984c\u3067\u3042\u3063\u305f\u91cd\u529b\u306b\u3088\u308b\u30d5\u30a3\u30e9\u30fc\u6c88\u964d\u306e\u5f71\u97ff\u3092\u3001\u96fb\u6975\u3092\u56de\u8ee2\u3059\u308b\u3053\u3068\u306b\u3088\u308a\u6392\u9664\u3059\u308b\u56de\u8ee2\u96fb\u6975\u96fb\u754c\u6574\u5217\u6280\u8853\u3092\u958b\u767a\u3057\u3001\u3053\u306e\u6280\u8853\u306e\u793e\u4f1a\u5b9f\u88c5\u306b\u5411\u3051\u305f\u53d6\u308a\u7d44\u307f\u3092\u9032\u3081\u3066\u3044\u307e\u3059\u3002
Keywords: diamond, vertical, power device
Diam. Relat. Mater., 146, 111246 (2024), Func. Diam. 4(1), 2423643 (2024).<\/p>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n\n\n\n
<\/div>\n\n\n\nElectronic Application of Carbon Nanotubes<\/strong><\/h3>\n\n\n\n\n\n\n<\/div>\n\n\n\n\n\n\nCarbon nanotubes for gas sensing<\/h4>\n\n\n\n
\u30ab\u30fc\u30dc\u30f3\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6(CNT)\u306f\u3001\u9ad8\u3044\u6bd4\u8868\u9762\u7a4d\u304b\u3089\u8868\u9762\u654f\u611f\u306a\u30ac\u30b9\u306e\u30bb\u30f3\u30b7\u30f3\u30b0\u304c\u53ef\u80fd\u3067\u3059\u3002\u8fd1\u5e74\u3001\u9ad8\u54c1\u8cea\u306a\u534a\u5c0e\u4f53CNT\u304c\u5f97\u3089\u308c\u308b\u3088\u3046\u306b\u306a\u3063\u305f\u3053\u3068\u3084\u3001\u73fe\u5728\u53d6\u308a\u7d44\u3093\u3067\u3044\u308b\u8a98\u96fb\u6cf3\u52d5\u96c6\u7a4d\u306e\u6280\u8853\u3092\u6d3b\u304b\u3057\u3001CNT\u306e\u30ac\u30b9\u30bb\u30f3\u30b5\u3092\u4f5c\u88fd\u3057\u3001\u305d\u306e\u7279\u6027\u3092\u8a55\u4fa1\u3057\u3066\u3044\u307e\u3059\u3002CNT\/\u96fb\u6975\u3001CNT\u5074\u58c1\u3001CNT\/CNT\u754c\u9762\u306a\u3069\u304c\u3001\u305d\u308c\u305e\u308c\u7570\u306a\u308b\u69d8\u5f0f\u306e\u5fdc\u7b54\u3092\u793a\u3057\u3066\u3044\u308b\u3053\u3068\u304c\u308f\u304b\u3063\u3066\u304d\u307e\u3057\u305f\u3002<\/p>\n\n\n\n
Keywords: CNTs, gas sensor, FET, NO2, contact, response rate, contact
AIP Adv., 10, 055223 (2020), Sens. Actuators B Chem., 344, 130257 (2021), AIP Adv. 12, 125302 (2022), AIP Adv. 14, 035140 (2024).<\/p>\n<\/div>\n\n\n\n
\n\n![\"\"](\"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-content\/uploads\/sites\/358\/2026\/07\/research_img01.png\")
Modulation properties during NO2 gas detection<\/figcaption><\/figure>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n\n\n\n\n\n<\/div>\n\n\n\n\n\n\nCarbon nanotube forest as a contact material for SiC power devices (Previous)<\/h4>\n\n\n\n
\u30ab\u30fc\u30dc\u30f3\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6(CNT)\u306f\u3001\u305d\u306e\u8ef8\u65b9\u5411\u306b\u9ad8\u3044\u96fb\u6c17\u4f1d\u5c0e\u6027\u3092\u6301\u3061\u307e\u3059\u3002\u307e\u305f\u3001SiC\u306e\u8868\u9762\u5206\u89e3\u6cd5\u306b\u3088\u308a\u5f62\u6210\u3055\u308c\u308bCNT\u30d5\u30a9\u30ec\u30b9\u30c8(CNT forest on SiC)\u306f\u3001\u975e\u5e38\u306b\u7a20\u5bc6\u3067\u3059\u3002\u305d\u3057\u3066\u3001SiC\u306f\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u6750\u6599\u3068\u3057\u3066\u6709\u671b\u8996\u3055\u308c\u3066\u3044\u307e\u3059\u304c\u3001\u3053\u306e\u96fb\u6d41\u53d6\u308a\u51fa\u3057\u306e\u969b\u306e\u3001\u96fb\u6975\u3068\u306e\u96fb\u6c17\u7684\u63a5\u89e6(\u30b3\u30f3\u30bf\u30af\u30c8)\u306b\u306f\u8ab2\u984c\u304c\u6b8b\u3063\u3066\u3044\u307e\u3059\u3002\u305d\u3053\u3067\u3001CNT forest on SiC\u304c\u3001SiC\u306e\u30aa\u30fc\u30df\u30c3\u30af\u96fb\u6975\u3068\u3057\u3066\u6709\u671b\u3067\u3042\u308b\u3053\u3068\u3092\u793a\u3057\u307e\u3057\u305f\u3002<\/p>\n\n\n\n
Keywords: CNTs, SiC, vertical, contact, power device
Appl. Phys. Lett. 106, 123501 (2015), Mater. Sci. Forum, 858, 561-564 (2016).<\/p>\n<\/div>\n\n\n\n
\n\n![\"\"](\"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-content\/uploads\/sites\/358\/2026\/07\/research_img02.png\")
A vertical type SiC MOSFET with CNT contacts
(Future vision)<\/figcaption><\/figure>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n\n\n\n\n\n<\/div>\n\n\n\n\n\n\nCarbon nanotube-carbon nanotube contact conductivity (Previous)<\/h4>\n\n\n\n
\u30ab\u30fc\u30dc\u30f3\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6(CNT)\u3069\u3046\u3057\u306e\u30b3\u30f3\u30bf\u30af\u30c8\u3092\u77e5\u308b\u3053\u3068\u306f\u3001CNT\u306e\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u5fdc\u7528\u306b\u3068\u3063\u3066\u91cd\u8981\u3067\u3059\u3002SiC\u306e\u8868\u9762\u5206\u89e3\u6cd5\u306b\u3088\u308a\u5f62\u6210\u3055\u308c\u308bCNT\u30d5\u30a9\u30ec\u30b9\u30c8(CNT forest on SiC)\u306f\u3001\u975e\u5e38\u306b\u7a20\u5bc6\u306a\u306e\u3067\u3001\u3053\u306e\u9762\u5185\u65b9\u5411\u306e\u96fb\u6c17\u4f1d\u5c0e\u6027\u306fCNT\u3069\u3046\u3057\u306e\u30b3\u30f3\u30bf\u30af\u30c8\u304c\u652f\u914d\u7684\u3067\u3042\u308b\u3068\u8003\u3048\u3089\u308c\u307e\u3059\u3002CNT\u3069\u3046\u3057\u306e\u63a5\u89e6\u4f1d\u5c0e\u5ea6\u3092\u8a08\u7b97\u3059\u308b\u3068\u3001CNT-CNT\u9593\u306e\u30c8\u30f3\u30cd\u30eb\u96fb\u6d41\u306e\u5024\u3068\u3088\u304f\u4e00\u81f4\u3057\u307e\u3057\u305f\u3002CNT-CNT\u9593\u306b\u306f\u30c8\u30f3\u30cd\u30eb\u96fb\u6d41\u304c\u6d41\u308c\u308b\u3068\u8003\u3048\u308b\u3068\u3088\u304f\u8aac\u660e\u3067\u304d\u308b\u3053\u3068\u3092\u5b9f\u9a13\u7684\u306b\u793a\u3059\u3053\u3068\u304c\u3067\u304d\u307e\u3057\u305f\u3002<\/p>\n\n\n\n
Keywords: CNTs, SiC, horizontal, contact
J. Phys. Chem. C, 120 (11), 6232\u20136238 (2016).<\/p>\n<\/div>\n\n\n\n
\n\n![\"\"](\"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-content\/uploads\/sites\/358\/2026\/07\/research_img03.png\")
Packed CNTs are faceted like hexagons, and current conducts by tunneling between CNTs.<\/figcaption><\/figure>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n\n\n\n\n\n<\/div>\n\n\n\n\n\n\nCarbon nanotube-metal probe contact conductivity (Previous)<\/h4>\n\n\n\n
\u30ab\u30fc\u30dc\u30f3\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6(CNT)\u306e\u958b\u7aef\u3057\u305f\u7aef\u90e8\u3068\u539f\u5b50\u9593\u529b\u9855\u5fae\u93e1(AFM)\u306e\u5c0e\u96fb\u6027\u30d7\u30ed\u30fc\u30d6\u3068\u306e\u63a5\u89e6\u62b5\u6297\u3092\u8a55\u4fa1\u3057\u307e\u3057\u305f\u3002CNT\u306b\u5927\u304d\u306a\u96fb\u6d41\u3092\u6d41\u3059\u306a\u3069\u3001\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u3001\u5c0e\u96fb\u6027\u649a\u7cf8\u306a\u3069\u306e\u5fdc\u7528\u306b\u91cd\u8981\u306a\u6570\u5024\u3092\u793a\u3059\u3053\u3068\u304c\u3067\u304d\u307e\u3057\u305f\u3002<\/p>\n\n\n\n
Keywords: CNTs, edge, contact, AFM
J. Appl. Phys. 123, 244502 (2018).<\/p>\n<\/div>\n\n\n\n
\n\n![\"\"](\"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-content\/uploads\/sites\/358\/2026\/07\/research_img04.png\")
Conductive AFM tip contact to the CNT ends.<\/figcaption><\/figure>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n\n\n\n<\/div>\n\n\n\nElectronic Application of Diamond (Previous)<\/strong><\/h3>\n\n\n\n\n\n\n<\/div>\n\n\n\n\n\n\nVertical type two-dimensional hole gas (2DHG) diamond power MOSFET<\/h4>\n\n\n\n
\u4e0d\u7d14\u7269\u6fc3\u5ea6\u306e\u4f4e\u3044(Undoped)\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u8868\u9762\u3092\u6c34\u7d20\u3067\u7d42\u7aef\u3059\u308b\u3068\u3001\u8868\u9762\u306b2\u6b21\u5143\u6b63\u5b54\u30ac\u30b9(2DHG)\u304c\u8a98\u8d77\u3067\u304d\u308b\u3088\u3046\u306b\u306a\u308a\u307e\u3059\u30022DHG\u306f\u8868\u9762\u306e\u9762\u6c34\u5e73\u65b9\u5411\u306b\u96fb\u6c17\u4f1d\u5c0e\u6027\u3092\u6301\u3064\u305f\u3081\u3001\u3053\u308c\u3092\u5229\u7528\u3057\u305f\u91d1\u5c5e-\u7d76\u7e01\u9178\u5316\u819c-\u534a\u5c0e\u4f53\u96fb\u754c\u52b9\u679c\u30c8\u30e9\u30f3\u30b8\u30b9\u30bf(MOSFET)\u3092\u4f5c\u6210\u3059\u308b\u3053\u3068\u304c\u3067\u304d\u3001\u3053\u308c\u306f\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u512a\u308c\u305f\u7269\u6027\u306b\u3088\u308ap\u578b\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u3068\u3057\u3066\u3081\u3056\u307e\u3057\u3044\u6027\u80fd\u3092\u767a\u63ee\u3057\u307e\u3059\u30022DHG\u306f\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u9762\u65b9\u4f4d\u306b\u3088\u3089\u305a\u5f62\u6210\u3067\u304d\u308b\u305f\u3081\u3001\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u8868\u9762\u3092\u7e26\u65b9\u5411\u306b\u3059\u308b\u3053\u3068\u3067\u3001\u7e26\u65b9\u5411\u306b\u3082\u4f1d\u5c0e\u3055\u305b\u308b\u3053\u3068\u304c\u3067\u304d\u307e\u3059\u3002\u7e26\u65b9\u5411\u306b\u96fb\u6d41\u3092\u6d41\u305b\u308b\u3068\u3001\u30c7\u30d0\u30a4\u30b9\u306e\u5c02\u6709\u9762\u7a4d\u3092\u6e1b\u5c11\u3055\u305b\u308b\u3053\u3068\u304c\u3067\u304d\u3001\u540c\u3058\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u6295\u5f71\u9762\u7a4d\u3042\u305f\u308a\u306b\u9ad8\u3044\u96fb\u6d41\u3092\u6d41\u3059\u3053\u3068\u304c\u3067\u304d\u307e\u3059\u3002\u3053\u306e\u7e26\u578b2DHG\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9MOSFET\u3092\u4e16\u754c\u306b\u5148\u99c6\u3051\u3066\u4f5c\u88fd\u3001\u5831\u544a\u3057\u307e\u3057\u305f\u3002<\/p>\n\n\n\n
Keywords: diamond, vertical, power device
Appl. Phys. Lett., 109, 033503 (2016), Sci. Rep. 8. 10660 (2018).<\/p>\n<\/div>\n\n\n\n
\n\n![\"\"](\"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-content\/uploads\/sites\/358\/2026\/07\/research_img05.png\")
Two dimensional hole gas layer can be induced even on the trench side wall and act as the channel of vertical type diamond MOSFETs.<\/figcaption><\/figure>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n\n\n\n\n\n<\/div>\n\n\n\n\n\n\nThreshold voltage control of two-dimensional hole gas diamond MOSFET<\/h4>\n\n\n\n
\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u8868\u9762\u306e2\u6b21\u5143\u6b63\u5b54\u30ac\u30b9(2DHG)\u3092\u5229\u7528\u3057\u305fMOSFET\u306f\u3001\u30b2\u30fc\u30c8\u7d76\u7e01\u819c\u306e\u539f\u5b50\u5c64\u5806\u7a4d\u6cd5(ALD)\u306b\u3088\u308b\u9178\u5316\u30a2\u30eb\u30df\u30cb\u30a6\u30e0(Al2O3)\u306b\u3088\u308a\u3001\u30b2\u30fc\u30c8\u96fb\u5727\u3092\u5370\u52a0\u3057\u306a\u304f\u3066\u3082\u96fb\u6d41\u3092\u6d41\u3059\u3001\u30ce\u30fc\u30de\u30ea\u30fc\u30aa\u30f3\u306e\u7279\u6027\uff08\u30c7\u30a3\u30d7\u30ea\u30fc\u30b7\u30e7\u30f3\u578b\uff09\u3092\u793a\u3057\u307e\u3059\u3002\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u3068\u3057\u3066\u4f7f\u3046\u5834\u5408\u3001\u3082\u3057\u30c7\u30d0\u30a4\u30b9\u304c\u7834\u58ca\u3057\u3066\u3082\u5b89\u5168\u306b\u52d5\u4f5c\u3092\u505c\u6b62\u3059\u308b\u3053\u3068\u304c\u3067\u304d\u308b\u3001\u30ce\u30fc\u30de\u30ea\u30fc\u30aa\u30d5\u306e\u7279\u6027\u304c\u671b\u307e\u308c\u307e\u3059\u3002\u3053\u308c\u3092\u9054\u6210\u3059\u308b\u305f\u3081\u306b\u3001\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u8868\u9762\u3092\u308f\u305a\u304b\u306b\u9178\u5316\u3059\u308b\u3053\u3068\u3067\u3001\u8868\u9762\u96fb\u4f4d\u3092\u5236\u5fa1\u3057\u3001\u30c7\u30d0\u30a4\u30b9\u306e\u95be\u5024\u3092\u5909\u5316\u3055\u305b\u3001\u30ce\u30fc\u30de\u30ea\u30fc\u30aa\u30d5\u7279\u6027\u3092\u5f97\u307e\u3057\u305f\u3002\u307e\u305f\u3002\u30b2\u30fc\u30c8\u3092\u96fb\u89e3\u8cea\u6eb6\u6db2\u3001\u7d76\u7e01\u819c\u3092\u96fb\u6c17\u4e8c\u91cd\u5c64\u3068\u3059\u308b\u3001\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u96fb\u89e3\u8cea\u6eb6\u6db2\u30b2\u30fc\u30c8FET(SGFET)\u306b\u304a\u3044\u3066\u3082\u3001\u96fb\u6c17\u5316\u5b66\u7684\u306a\u8868\u9762\u51e6\u7406\u306b\u3088\u308a\u3001\u3057\u304d\u3044\u5024\u306e\u30b7\u30d5\u30c8\u3092\u78ba\u8a8d\u3057\u307e\u3057\u305f\u3002<\/p>\n\n\n\n
Keywords: diamond, threshold voltage, power device
IEEE Electron Dev. Lett., 38, 3, 363 – 366 (2017), Appl. Phys. Lett., 111, 013505 (2017),
IEEE Electron Dev. Lett., 40, 6, 933 – 936 (2019).<\/p>\n<\/div>\n\n\n\n
\n\n![\"\"](\"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-content\/uploads\/sites\/358\/2026\/07\/research_img06.png\")
Threshold voltage of hydrogen terminated diamond SGFET was shifted to negative by mild electrochemical oxidation.<\/figcaption><\/figure>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n\n\n\n\n\n<\/div>\n\n\n\n\n\n\nElectrical properties of two-dimensional hole gas on hydrogen terminated diamond surface<\/h4>\n\n\n\n
\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u8868\u9762\u306e2\u6b21\u5143\u6b63\u5b54\u30ac\u30b9(2DHG)\u3092\u5229\u7528\u3057\u305fMOSFET\u3067\u306f\u3001\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u30c8\u30c3\u30d7\u30b2\u30fc\u30c8\u3092\u5b9f\u73fe\u3059\u308b\u305f\u3081\u306b\u3001\u6c34\u7d20\u7d42\u7aef\u306e\u8868\u9762\u306bALD-Al2O3\u3084h-BN\u306a\u3069\u306e\u7d76\u7e01\u819c\u3092\u5806\u7a4d\u3059\u308b\u306e\u304c\u4e00\u822c\u7684\u3067\u3059\u304c\u3001\u3053\u308c\u3089\u306e\u7d76\u7e01\u819c\u306f\u3001\u5fc5\u7136\u7684\u306b\u96fb\u8377\u3092\u6301\u3063\u3066\u3044\u308b\u305f\u3081\u3001\u6c34\u7d20\u7d42\u7aef\u672c\u6765\u306e\u3001\u96fb\u754c\u52b9\u679c\u306b\u3088\u308b\u96fb\u6c17\u7279\u6027\u3092\u53d6\u5f97\u3059\u308b\u3053\u3068\u306f\u3067\u304d\u307e\u305b\u3093\u3002\u305d\u3053\u3067\u3001\u30b2\u30fc\u30c8\u7d76\u7e01\u819c\u3092\u3001\u96fb\u8377\u3092\u6301\u305f\u306a\u3044\u306f\u305a\u306e\u771f\u7a7a\u306b\u3059\u308b\u3053\u3068\u3067\u3001\u6c34\u7d20\u7d42\u7aef\u306e\u672c\u6765\u306e\u754c\u9762\u6e96\u4f4d\u5bc6\u5ea6\u3092\u5c0e\u51fa\u3059\u308b\u3053\u3068\u3092\u76ee\u7684\u306b\u3001\u771f\u7a7a\u30ae\u30e3\u30c3\u30d7\u30b2\u30fc\u30c8(VGG)\u3092\u63d0\u6848\u3057\u3001\u6c34\u7d20\u7d42\u7aef\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u8868\u9762\u3092\u8a55\u4fa1\u3057\u307e\u3057\u305f\u3002\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u306e\u767a\u5c55\u306b\u5927\u304d\u304f\u8ca2\u732e\u3057\u3046\u308b\u6210\u679c\u3060\u3068\u601d\u3044\u307e\u3059\u3002<\/p>\n\n\n\n
Keywords: diamond, 2DHG, vacuum gate
Appl. Phys. Lett., 114, 253504 (2019).<\/p>\n<\/div>\n\n\n\n
\n\n![\"\"](\"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-content\/uploads\/sites\/358\/2026\/07\/research_img07.png\")
Structure of vacuum gap gate (VGG) device. Vacuum gap act as gate dielectric.<\/figcaption><\/figure>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n\n\n\n\n\n<\/div>\n\n\n\n\n\n\nVertical edge graphite on diamond<\/h4>\n\n\n\n
\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u8868\u9762\u306b\u3001\u30a4\u30aa\u30f3\u6ce8\u5165\u3068\u9ad8\u6e29\u71b1\u51e6\u7406\u3092\u65bd\u3059\u3053\u3068\u3067\u3001\u5782\u76f4\u306b\u914d\u5411\u3057\u305f\u30b0\u30e9\u30d5\u30a1\u30a4\u30c8\u69cb\u9020\u3092\u4e16\u754c\u3067\u521d\u3081\u3066\u4f5c\u88fd\u3057\u307e\u3057\u305f\u3002\u5782\u76f4\u914d\u5411\u30b0\u30e9\u30d5\u30a1\u30a4\u30c8\u306f\u3001\u5782\u76f4\u65b9\u5411\u306b\u9ad8\u3044\u96fb\u6c17\u4f1d\u5c0e\u6027\u3092\u6301\u3064\u3068\u8003\u3048\u3089\u308c\u308b\u305f\u3081\u3001\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u30d0\u30eb\u30af\u4f1d\u5c0e\u306b\u5bfe\u3059\u308b\u30b3\u30f3\u30bf\u30af\u30c8\u304c\u3088\u3044\u304b\u3082\u3057\u308c\u307e\u305b\u3093\u3002
\u672c\u8ad6\u6587\u306fPSSB\u306eSeptember 2017 \u306eBackcover<\/a>\u306b\u306a\u308a\u307e\u3057\u305f\u3002<\/p>\n\n\n\nKeywords: diamond, graphite, ion implantation, vertical\u3000Phys. Stat. Solid. B, 1700040 (2017).<\/p>\n<\/div>\n\n\n\n
\n\n![\"\"](\"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-content\/uploads\/sites\/358\/2026\/07\/research_img08.png\")
Vertical edge graphite layer on diamond was formed by implantation and high temperature annealing.<\/figcaption><\/figure>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n\n\n\n<\/div>\n\n\n\nQuantum Application of Diamond<\/strong><\/h3>\n\n\n\n\n\n\n\n\n\nSurface engineering to stabilize nitrogen vacancy centers at diamond near-surface region (Previous)<\/h4>\n\n\n\n
\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u7a92\u7d20-\u7a7a\u5b54\u4e2d\u5fc3(NV\u30bb\u30f3\u30bf\u30fc)\u306f\u3001\u512a\u308c\u305f\u30b9\u30d4\u30f3\u7279\u6027\u3092\u6301\u3064\u5358\u4e00\u5149\u5b50\u6e90\u3068\u3057\u3066\u6ce8\u76ee\u3055\u308c\u3066\u3044\u307e\u3059\u3002\u6b21\u4e16\u4ee3\u91cf\u5b50\u30bb\u30f3\u30b7\u30f3\u30b0\u3001\u91cf\u5b50\u30b3\u30f3\u30d4\u30e5\u30fc\u30bf\u30fc\u306e\u91cf\u5b50\u30d3\u30c3\u30c8\u306a\u3069\u304c\u5fdc\u7528\u3068\u3057\u3066\u8003\u3048\u3089\u308c\u3066\u3044\u307e\u3059\u3002NV\u30bb\u30f3\u30bf\u30fc\u3067\u3001\u751f\u4f53\u5206\u5b50\u306e\u6838\u30b9\u30d4\u30f3\u306a\u3069\u3092\u691c\u51fa\u3059\u308b\u969b\u3001NV\u30bb\u30f3\u30bf\u30fc\u306f\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u8868\u9762\u4ed8\u8fd1\u306b\u5b58\u5728\u3059\u308b\u5fc5\u8981\u304c\u3042\u308a\u307e\u3059\u304c\u3001\u305d\u306e\u969b\u3001NV\u30bb\u30f3\u30bf\u30fc\u306f\u5468\u56f2\u306e\u96fb\u8377\u3084\u78c1\u6c17\u30ce\u30a4\u30ba\u306e\u5f71\u97ff\u3092\u53d7\u3051\u3084\u3059\u304f\u306a\u308a\u307e\u3059\u3002\u305d\u308c\u3092\u56de\u907f\u3059\u308b\u305f\u3081\u3001\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u8868\u9762\u7d42\u7aef\u3092\u5de5\u592b\u3059\u308b\u3053\u3068\u3067\u3001\u305d\u306e\u691c\u51fa\u52b9\u7387\u3092\u4e0a\u3052\u308b\u691c\u8a0e\u3092\u884c\u3044\u307e\u3057\u305f\u3002<\/p>\n\n\n\n
Keywords: diamond, NV center, quantum sensing
Appl. Phys. Express, 10, 055503 (2017),\u00a0Jpn. J. Appl. Phys., 56, 4S, 04CK08\/1-7 (2017).<\/p>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"
Research Field: Composites, Carbon electronics, Electric engineering \u534a\u5c0e\u4f53\u5de5\u5b66\u3068\u6750\u6599\u5de5\u5b66\u3001\u96fb\u6c17\u5de5\u5b66\u306e\u5b66\u969b\u9818\u57df\u306b\u304a\u3044\u3066\u3001\u30ab\u30fc\u30dc\u30f3\u30ca\u30ce […]<\/p>\n","protected":false},"author":376,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_monsterinsights_skip_tracking":false,"footnotes":""},"class_list":["post-222","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/pages\/222","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/users\/376"}],"replies":[{"embeddable":true,"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/comments?post=222"}],"version-history":[{"count":110,"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/pages\/222\/revisions"}],"predecessor-version":[{"id":389,"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/pages\/222\/revisions\/389"}],"wp:attachment":[{"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/media?parent=222"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
Technology<\/strong><\/p>\n\n\n\n Material<\/strong><\/strong><\/p>\n\n\n\n Structure<\/strong><\/strong><\/p>\n\n\n\n Characterization<\/strong><\/strong><\/p>\n\n\n\n Application<\/strong><\/strong><\/p>\n\n\n\n Material<\/strong><\/strong><\/p>\n\n\n\n Structure<\/strong><\/strong><\/strong><\/p>\n\n\n\n Characterization<\/strong><\/strong><\/strong><\/p>\n\n\n\n Application<\/strong><\/strong><\/strong><\/p>\n\n\n\n \u96fb\u529b\u99c6\u52d5\u7cfb\u306e\u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u9ad8\u6027\u80fd\u5316\u3001\u9ad8\u96c6\u7a4d\u5316\u306b\u4f34\u3044\u3001\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u306e\u767a\u71b1\u304c\u554f\u984c\u306b\u306a\u3063\u3066\u3044\u308b\u3053\u3068\u304b\u3089\u3001\u5c0f\u3055\u3044\u7d20\u5b50\u304b\u3089\u52b9\u7387\u3088\u304f\u71b1\u3092\u9003\u304c\u3059\u3001\u30b5\u30fc\u30de\u30eb\u30de\u30cd\u30b8\u30e1\u30f3\u30c8\u306e\u91cd\u8981\u6027\u304c\u5897\u3057\u3066\u3044\u307e\u3059\u3002\u73fe\u5728\u3001\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u5411\u3051\u306e\u653e\u71b1\u6750\u6599\u3068\u3057\u3066\u3001\u767a\u71b1\u4f53\u3068\u30d2\u30fc\u30c8\u30b7\u30f3\u30af\u306e\u9593\u306b\u633f\u5165\u3059\u308b\u3001\u5f3e\u6027\u6a39\u8102\u306b\u71b1\u4f1d\u5c0e\u30d5\u30a3\u30e9\u30fc\u3092\u8907\u5408\u3057\u305f\u653e\u71b1\u30b7\u30fc\u30c8\u3092\u3001\u96fb\u754c\u6574\u5217\u306b\u3088\u308a\u9ad8\u6027\u80fd\u5316\u3059\u308b\u7814\u7a76\u3092\u63a8\u9032\u3057\u3066\u3044\u307e\u3059\u3002\u305d\u306e\u4e2d\u3067\u96fb\u754c\u6574\u5217\u306b\u304a\u3044\u3066\u8ab2\u984c\u3067\u3042\u3063\u305f\u91cd\u529b\u306b\u3088\u308b\u30d5\u30a3\u30e9\u30fc\u6c88\u964d\u306e\u5f71\u97ff\u3092\u3001\u96fb\u6975\u3092\u56de\u8ee2\u3059\u308b\u3053\u3068\u306b\u3088\u308a\u6392\u9664\u3059\u308b\u56de\u8ee2\u96fb\u6975\u96fb\u754c\u6574\u5217\u6280\u8853\u3092\u958b\u767a\u3057\u3001\u3053\u306e\u6280\u8853\u306e\u793e\u4f1a\u5b9f\u88c5\u306b\u5411\u3051\u305f\u53d6\u308a\u7d44\u307f\u3092\u9032\u3081\u3066\u3044\u307e\u3059\u3002 \u30ab\u30fc\u30dc\u30f3\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6(CNT)\u306f\u3001\u9ad8\u3044\u6bd4\u8868\u9762\u7a4d\u304b\u3089\u8868\u9762\u654f\u611f\u306a\u30ac\u30b9\u306e\u30bb\u30f3\u30b7\u30f3\u30b0\u304c\u53ef\u80fd\u3067\u3059\u3002\u8fd1\u5e74\u3001\u9ad8\u54c1\u8cea\u306a\u534a\u5c0e\u4f53CNT\u304c\u5f97\u3089\u308c\u308b\u3088\u3046\u306b\u306a\u3063\u305f\u3053\u3068\u3084\u3001\u73fe\u5728\u53d6\u308a\u7d44\u3093\u3067\u3044\u308b\u8a98\u96fb\u6cf3\u52d5\u96c6\u7a4d\u306e\u6280\u8853\u3092\u6d3b\u304b\u3057\u3001CNT\u306e\u30ac\u30b9\u30bb\u30f3\u30b5\u3092\u4f5c\u88fd\u3057\u3001\u305d\u306e\u7279\u6027\u3092\u8a55\u4fa1\u3057\u3066\u3044\u307e\u3059\u3002CNT\/\u96fb\u6975\u3001CNT\u5074\u58c1\u3001CNT\/CNT\u754c\u9762\u306a\u3069\u304c\u3001\u305d\u308c\u305e\u308c\u7570\u306a\u308b\u69d8\u5f0f\u306e\u5fdc\u7b54\u3092\u793a\u3057\u3066\u3044\u308b\u3053\u3068\u304c\u308f\u304b\u3063\u3066\u304d\u307e\u3057\u305f\u3002<\/p>\n\n\n\n Keywords: CNTs, gas sensor, FET, NO2, contact, response rate, contact \u30ab\u30fc\u30dc\u30f3\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6(CNT)\u306f\u3001\u305d\u306e\u8ef8\u65b9\u5411\u306b\u9ad8\u3044\u96fb\u6c17\u4f1d\u5c0e\u6027\u3092\u6301\u3061\u307e\u3059\u3002\u307e\u305f\u3001SiC\u306e\u8868\u9762\u5206\u89e3\u6cd5\u306b\u3088\u308a\u5f62\u6210\u3055\u308c\u308bCNT\u30d5\u30a9\u30ec\u30b9\u30c8(CNT forest on SiC)\u306f\u3001\u975e\u5e38\u306b\u7a20\u5bc6\u3067\u3059\u3002\u305d\u3057\u3066\u3001SiC\u306f\u6b21\u4e16\u4ee3\u30d1\u30ef\u30fc\u534a\u5c0e\u4f53\u6750\u6599\u3068\u3057\u3066\u6709\u671b\u8996\u3055\u308c\u3066\u3044\u307e\u3059\u304c\u3001\u3053\u306e\u96fb\u6d41\u53d6\u308a\u51fa\u3057\u306e\u969b\u306e\u3001\u96fb\u6975\u3068\u306e\u96fb\u6c17\u7684\u63a5\u89e6(\u30b3\u30f3\u30bf\u30af\u30c8)\u306b\u306f\u8ab2\u984c\u304c\u6b8b\u3063\u3066\u3044\u307e\u3059\u3002\u305d\u3053\u3067\u3001CNT forest on SiC\u304c\u3001SiC\u306e\u30aa\u30fc\u30df\u30c3\u30af\u96fb\u6975\u3068\u3057\u3066\u6709\u671b\u3067\u3042\u308b\u3053\u3068\u3092\u793a\u3057\u307e\u3057\u305f\u3002<\/p>\n\n\n\n Keywords: CNTs, SiC, vertical, contact, power device \u30ab\u30fc\u30dc\u30f3\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6(CNT)\u3069\u3046\u3057\u306e\u30b3\u30f3\u30bf\u30af\u30c8\u3092\u77e5\u308b\u3053\u3068\u306f\u3001CNT\u306e\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u5fdc\u7528\u306b\u3068\u3063\u3066\u91cd\u8981\u3067\u3059\u3002SiC\u306e\u8868\u9762\u5206\u89e3\u6cd5\u306b\u3088\u308a\u5f62\u6210\u3055\u308c\u308bCNT\u30d5\u30a9\u30ec\u30b9\u30c8(CNT forest on SiC)\u306f\u3001\u975e\u5e38\u306b\u7a20\u5bc6\u306a\u306e\u3067\u3001\u3053\u306e\u9762\u5185\u65b9\u5411\u306e\u96fb\u6c17\u4f1d\u5c0e\u6027\u306fCNT\u3069\u3046\u3057\u306e\u30b3\u30f3\u30bf\u30af\u30c8\u304c\u652f\u914d\u7684\u3067\u3042\u308b\u3068\u8003\u3048\u3089\u308c\u307e\u3059\u3002CNT\u3069\u3046\u3057\u306e\u63a5\u89e6\u4f1d\u5c0e\u5ea6\u3092\u8a08\u7b97\u3059\u308b\u3068\u3001CNT-CNT\u9593\u306e\u30c8\u30f3\u30cd\u30eb\u96fb\u6d41\u306e\u5024\u3068\u3088\u304f\u4e00\u81f4\u3057\u307e\u3057\u305f\u3002CNT-CNT\u9593\u306b\u306f\u30c8\u30f3\u30cd\u30eb\u96fb\u6d41\u304c\u6d41\u308c\u308b\u3068\u8003\u3048\u308b\u3068\u3088\u304f\u8aac\u660e\u3067\u304d\u308b\u3053\u3068\u3092\u5b9f\u9a13\u7684\u306b\u793a\u3059\u3053\u3068\u304c\u3067\u304d\u307e\u3057\u305f\u3002<\/p>\n\n\n\n Keywords: CNTs, SiC, horizontal, contact \u30ab\u30fc\u30dc\u30f3\u30ca\u30ce\u30c1\u30e5\u30fc\u30d6(CNT)\u306e\u958b\u7aef\u3057\u305f\u7aef\u90e8\u3068\u539f\u5b50\u9593\u529b\u9855\u5fae\u93e1(AFM)\u306e\u5c0e\u96fb\u6027\u30d7\u30ed\u30fc\u30d6\u3068\u306e\u63a5\u89e6\u62b5\u6297\u3092\u8a55\u4fa1\u3057\u307e\u3057\u305f\u3002CNT\u306b\u5927\u304d\u306a\u96fb\u6d41\u3092\u6d41\u3059\u306a\u3069\u3001\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u3001\u5c0e\u96fb\u6027\u649a\u7cf8\u306a\u3069\u306e\u5fdc\u7528\u306b\u91cd\u8981\u306a\u6570\u5024\u3092\u793a\u3059\u3053\u3068\u304c\u3067\u304d\u307e\u3057\u305f\u3002<\/p>\n\n\n\n Keywords: CNTs, edge, contact, AFM \u4e0d\u7d14\u7269\u6fc3\u5ea6\u306e\u4f4e\u3044(Undoped)\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u8868\u9762\u3092\u6c34\u7d20\u3067\u7d42\u7aef\u3059\u308b\u3068\u3001\u8868\u9762\u306b2\u6b21\u5143\u6b63\u5b54\u30ac\u30b9(2DHG)\u304c\u8a98\u8d77\u3067\u304d\u308b\u3088\u3046\u306b\u306a\u308a\u307e\u3059\u30022DHG\u306f\u8868\u9762\u306e\u9762\u6c34\u5e73\u65b9\u5411\u306b\u96fb\u6c17\u4f1d\u5c0e\u6027\u3092\u6301\u3064\u305f\u3081\u3001\u3053\u308c\u3092\u5229\u7528\u3057\u305f\u91d1\u5c5e-\u7d76\u7e01\u9178\u5316\u819c-\u534a\u5c0e\u4f53\u96fb\u754c\u52b9\u679c\u30c8\u30e9\u30f3\u30b8\u30b9\u30bf(MOSFET)\u3092\u4f5c\u6210\u3059\u308b\u3053\u3068\u304c\u3067\u304d\u3001\u3053\u308c\u306f\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u512a\u308c\u305f\u7269\u6027\u306b\u3088\u308ap\u578b\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u3068\u3057\u3066\u3081\u3056\u307e\u3057\u3044\u6027\u80fd\u3092\u767a\u63ee\u3057\u307e\u3059\u30022DHG\u306f\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u9762\u65b9\u4f4d\u306b\u3088\u3089\u305a\u5f62\u6210\u3067\u304d\u308b\u305f\u3081\u3001\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u8868\u9762\u3092\u7e26\u65b9\u5411\u306b\u3059\u308b\u3053\u3068\u3067\u3001\u7e26\u65b9\u5411\u306b\u3082\u4f1d\u5c0e\u3055\u305b\u308b\u3053\u3068\u304c\u3067\u304d\u307e\u3059\u3002\u7e26\u65b9\u5411\u306b\u96fb\u6d41\u3092\u6d41\u305b\u308b\u3068\u3001\u30c7\u30d0\u30a4\u30b9\u306e\u5c02\u6709\u9762\u7a4d\u3092\u6e1b\u5c11\u3055\u305b\u308b\u3053\u3068\u304c\u3067\u304d\u3001\u540c\u3058\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u6295\u5f71\u9762\u7a4d\u3042\u305f\u308a\u306b\u9ad8\u3044\u96fb\u6d41\u3092\u6d41\u3059\u3053\u3068\u304c\u3067\u304d\u307e\u3059\u3002\u3053\u306e\u7e26\u578b2DHG\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9MOSFET\u3092\u4e16\u754c\u306b\u5148\u99c6\u3051\u3066\u4f5c\u88fd\u3001\u5831\u544a\u3057\u307e\u3057\u305f\u3002<\/p>\n\n\n\n Keywords: diamond, vertical, power device \u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u8868\u9762\u306e2\u6b21\u5143\u6b63\u5b54\u30ac\u30b9(2DHG)\u3092\u5229\u7528\u3057\u305fMOSFET\u306f\u3001\u30b2\u30fc\u30c8\u7d76\u7e01\u819c\u306e\u539f\u5b50\u5c64\u5806\u7a4d\u6cd5(ALD)\u306b\u3088\u308b\u9178\u5316\u30a2\u30eb\u30df\u30cb\u30a6\u30e0(Al2O3)\u306b\u3088\u308a\u3001\u30b2\u30fc\u30c8\u96fb\u5727\u3092\u5370\u52a0\u3057\u306a\u304f\u3066\u3082\u96fb\u6d41\u3092\u6d41\u3059\u3001\u30ce\u30fc\u30de\u30ea\u30fc\u30aa\u30f3\u306e\u7279\u6027\uff08\u30c7\u30a3\u30d7\u30ea\u30fc\u30b7\u30e7\u30f3\u578b\uff09\u3092\u793a\u3057\u307e\u3059\u3002\u30d1\u30ef\u30fc\u30c7\u30d0\u30a4\u30b9\u3068\u3057\u3066\u4f7f\u3046\u5834\u5408\u3001\u3082\u3057\u30c7\u30d0\u30a4\u30b9\u304c\u7834\u58ca\u3057\u3066\u3082\u5b89\u5168\u306b\u52d5\u4f5c\u3092\u505c\u6b62\u3059\u308b\u3053\u3068\u304c\u3067\u304d\u308b\u3001\u30ce\u30fc\u30de\u30ea\u30fc\u30aa\u30d5\u306e\u7279\u6027\u304c\u671b\u307e\u308c\u307e\u3059\u3002\u3053\u308c\u3092\u9054\u6210\u3059\u308b\u305f\u3081\u306b\u3001\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u8868\u9762\u3092\u308f\u305a\u304b\u306b\u9178\u5316\u3059\u308b\u3053\u3068\u3067\u3001\u8868\u9762\u96fb\u4f4d\u3092\u5236\u5fa1\u3057\u3001\u30c7\u30d0\u30a4\u30b9\u306e\u95be\u5024\u3092\u5909\u5316\u3055\u305b\u3001\u30ce\u30fc\u30de\u30ea\u30fc\u30aa\u30d5\u7279\u6027\u3092\u5f97\u307e\u3057\u305f\u3002\u307e\u305f\u3002\u30b2\u30fc\u30c8\u3092\u96fb\u89e3\u8cea\u6eb6\u6db2\u3001\u7d76\u7e01\u819c\u3092\u96fb\u6c17\u4e8c\u91cd\u5c64\u3068\u3059\u308b\u3001\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u96fb\u89e3\u8cea\u6eb6\u6db2\u30b2\u30fc\u30c8FET(SGFET)\u306b\u304a\u3044\u3066\u3082\u3001\u96fb\u6c17\u5316\u5b66\u7684\u306a\u8868\u9762\u51e6\u7406\u306b\u3088\u308a\u3001\u3057\u304d\u3044\u5024\u306e\u30b7\u30d5\u30c8\u3092\u78ba\u8a8d\u3057\u307e\u3057\u305f\u3002<\/p>\n\n\n\n Keywords: diamond, threshold voltage, power device \u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u8868\u9762\u306e2\u6b21\u5143\u6b63\u5b54\u30ac\u30b9(2DHG)\u3092\u5229\u7528\u3057\u305fMOSFET\u3067\u306f\u3001\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u30c8\u30c3\u30d7\u30b2\u30fc\u30c8\u3092\u5b9f\u73fe\u3059\u308b\u305f\u3081\u306b\u3001\u6c34\u7d20\u7d42\u7aef\u306e\u8868\u9762\u306bALD-Al2O3\u3084h-BN\u306a\u3069\u306e\u7d76\u7e01\u819c\u3092\u5806\u7a4d\u3059\u308b\u306e\u304c\u4e00\u822c\u7684\u3067\u3059\u304c\u3001\u3053\u308c\u3089\u306e\u7d76\u7e01\u819c\u306f\u3001\u5fc5\u7136\u7684\u306b\u96fb\u8377\u3092\u6301\u3063\u3066\u3044\u308b\u305f\u3081\u3001\u6c34\u7d20\u7d42\u7aef\u672c\u6765\u306e\u3001\u96fb\u754c\u52b9\u679c\u306b\u3088\u308b\u96fb\u6c17\u7279\u6027\u3092\u53d6\u5f97\u3059\u308b\u3053\u3068\u306f\u3067\u304d\u307e\u305b\u3093\u3002\u305d\u3053\u3067\u3001\u30b2\u30fc\u30c8\u7d76\u7e01\u819c\u3092\u3001\u96fb\u8377\u3092\u6301\u305f\u306a\u3044\u306f\u305a\u306e\u771f\u7a7a\u306b\u3059\u308b\u3053\u3068\u3067\u3001\u6c34\u7d20\u7d42\u7aef\u306e\u672c\u6765\u306e\u754c\u9762\u6e96\u4f4d\u5bc6\u5ea6\u3092\u5c0e\u51fa\u3059\u308b\u3053\u3068\u3092\u76ee\u7684\u306b\u3001\u771f\u7a7a\u30ae\u30e3\u30c3\u30d7\u30b2\u30fc\u30c8(VGG)\u3092\u63d0\u6848\u3057\u3001\u6c34\u7d20\u7d42\u7aef\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u8868\u9762\u3092\u8a55\u4fa1\u3057\u307e\u3057\u305f\u3002\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u96fb\u5b50\u30c7\u30d0\u30a4\u30b9\u306e\u767a\u5c55\u306b\u5927\u304d\u304f\u8ca2\u732e\u3057\u3046\u308b\u6210\u679c\u3060\u3068\u601d\u3044\u307e\u3059\u3002<\/p>\n\n\n\n Keywords: diamond, 2DHG, vacuum gate \u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u8868\u9762\u306b\u3001\u30a4\u30aa\u30f3\u6ce8\u5165\u3068\u9ad8\u6e29\u71b1\u51e6\u7406\u3092\u65bd\u3059\u3053\u3068\u3067\u3001\u5782\u76f4\u306b\u914d\u5411\u3057\u305f\u30b0\u30e9\u30d5\u30a1\u30a4\u30c8\u69cb\u9020\u3092\u4e16\u754c\u3067\u521d\u3081\u3066\u4f5c\u88fd\u3057\u307e\u3057\u305f\u3002\u5782\u76f4\u914d\u5411\u30b0\u30e9\u30d5\u30a1\u30a4\u30c8\u306f\u3001\u5782\u76f4\u65b9\u5411\u306b\u9ad8\u3044\u96fb\u6c17\u4f1d\u5c0e\u6027\u3092\u6301\u3064\u3068\u8003\u3048\u3089\u308c\u308b\u305f\u3081\u3001\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u30d0\u30eb\u30af\u4f1d\u5c0e\u306b\u5bfe\u3059\u308b\u30b3\u30f3\u30bf\u30af\u30c8\u304c\u3088\u3044\u304b\u3082\u3057\u308c\u307e\u305b\u3093\u3002 Keywords: diamond, graphite, ion implantation, vertical\u3000Phys. Stat. Solid. B, 1700040 (2017).<\/p>\n<\/div>\n\n\n\n \u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u7a92\u7d20-\u7a7a\u5b54\u4e2d\u5fc3(NV\u30bb\u30f3\u30bf\u30fc)\u306f\u3001\u512a\u308c\u305f\u30b9\u30d4\u30f3\u7279\u6027\u3092\u6301\u3064\u5358\u4e00\u5149\u5b50\u6e90\u3068\u3057\u3066\u6ce8\u76ee\u3055\u308c\u3066\u3044\u307e\u3059\u3002\u6b21\u4e16\u4ee3\u91cf\u5b50\u30bb\u30f3\u30b7\u30f3\u30b0\u3001\u91cf\u5b50\u30b3\u30f3\u30d4\u30e5\u30fc\u30bf\u30fc\u306e\u91cf\u5b50\u30d3\u30c3\u30c8\u306a\u3069\u304c\u5fdc\u7528\u3068\u3057\u3066\u8003\u3048\u3089\u308c\u3066\u3044\u307e\u3059\u3002NV\u30bb\u30f3\u30bf\u30fc\u3067\u3001\u751f\u4f53\u5206\u5b50\u306e\u6838\u30b9\u30d4\u30f3\u306a\u3069\u3092\u691c\u51fa\u3059\u308b\u969b\u3001NV\u30bb\u30f3\u30bf\u30fc\u306f\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u8868\u9762\u4ed8\u8fd1\u306b\u5b58\u5728\u3059\u308b\u5fc5\u8981\u304c\u3042\u308a\u307e\u3059\u304c\u3001\u305d\u306e\u969b\u3001NV\u30bb\u30f3\u30bf\u30fc\u306f\u5468\u56f2\u306e\u96fb\u8377\u3084\u78c1\u6c17\u30ce\u30a4\u30ba\u306e\u5f71\u97ff\u3092\u53d7\u3051\u3084\u3059\u304f\u306a\u308a\u307e\u3059\u3002\u305d\u308c\u3092\u56de\u907f\u3059\u308b\u305f\u3081\u3001\u30c0\u30a4\u30e4\u30e2\u30f3\u30c9\u306e\u8868\u9762\u7d42\u7aef\u3092\u5de5\u592b\u3059\u308b\u3053\u3068\u3067\u3001\u305d\u306e\u691c\u51fa\u52b9\u7387\u3092\u4e0a\u3052\u308b\u691c\u8a0e\u3092\u884c\u3044\u307e\u3057\u305f\u3002<\/p>\n\n\n\n Keywords: diamond, NV center, quantum sensing Research Field: Composites, Carbon electronics, Electric engineering \u534a\u5c0e\u4f53\u5de5\u5b66\u3068\u6750\u6599\u5de5\u5b66\u3001\u96fb\u6c17\u5de5\u5b66\u306e\u5b66\u969b\u9818\u57df\u306b\u304a\u3044\u3066\u3001\u30ab\u30fc\u30dc\u30f3\u30ca\u30ce […]<\/p>\n","protected":false},"author":376,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_monsterinsights_skip_tracking":false,"footnotes":""},"class_list":["post-222","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/pages\/222","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/users\/376"}],"replies":[{"embeddable":true,"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/comments?post=222"}],"version-history":[{"count":110,"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/pages\/222\/revisions"}],"predecessor-version":[{"id":389,"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/pages\/222\/revisions\/389"}],"wp:attachment":[{"href":"https:\/\/wps.itc.kansai-u.ac.jp\/inaba-labo\/wp-json\/wp\/v2\/media?parent=222"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}\n
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Keywords (Previous)<\/strong><\/h3>\n\n\n\n
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Composite Application of Diamond<\/strong><\/h3>\n\n\n\n
Heat conduction sheets with electrically aligned diamond fillers<\/h4>\n\n\n\n
Keywords: diamond, vertical, power device
Diam. Relat. Mater., 146, 111246 (2024), Func. Diam. 4(1), 2423643 (2024).<\/p>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n\n\n\nElectronic Application of Carbon Nanotubes<\/strong><\/h3>\n\n\n\n
Carbon nanotubes for gas sensing<\/h4>\n\n\n\n
AIP Adv., 10, 055223 (2020), Sens. Actuators B Chem., 344, 130257 (2021), AIP Adv. 12, 125302 (2022), AIP Adv. 14, 035140 (2024).<\/p>\n<\/div>\n\n\n\nCarbon nanotube forest as a contact material for SiC power devices (Previous)<\/h4>\n\n\n\n
Appl. Phys. Lett. 106, 123501 (2015), Mater. Sci. Forum, 858, 561-564 (2016).<\/p>\n<\/div>\n\n\n\n
(Future vision)<\/figcaption><\/figure>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n\n\n\nCarbon nanotube-carbon nanotube contact conductivity (Previous)<\/h4>\n\n\n\n
J. Phys. Chem. C, 120 (11), 6232\u20136238 (2016).<\/p>\n<\/div>\n\n\n\nCarbon nanotube-metal probe contact conductivity (Previous)<\/h4>\n\n\n\n
J. Appl. Phys. 123, 244502 (2018).<\/p>\n<\/div>\n\n\n\nElectronic Application of Diamond (Previous)<\/strong><\/h3>\n\n\n\n
Vertical type two-dimensional hole gas (2DHG) diamond power MOSFET<\/h4>\n\n\n\n
Appl. Phys. Lett., 109, 033503 (2016), Sci. Rep. 8. 10660 (2018).<\/p>\n<\/div>\n\n\n\nThreshold voltage control of two-dimensional hole gas diamond MOSFET<\/h4>\n\n\n\n
IEEE Electron Dev. Lett., 38, 3, 363 – 366 (2017), Appl. Phys. Lett., 111, 013505 (2017),
IEEE Electron Dev. Lett., 40, 6, 933 – 936 (2019).<\/p>\n<\/div>\n\n\n\nElectrical properties of two-dimensional hole gas on hydrogen terminated diamond surface<\/h4>\n\n\n\n
Appl. Phys. Lett., 114, 253504 (2019).<\/p>\n<\/div>\n\n\n\nVertical edge graphite on diamond<\/h4>\n\n\n\n
\u672c\u8ad6\u6587\u306fPSSB\u306eSeptember 2017 \u306eBackcover<\/a>\u306b\u306a\u308a\u307e\u3057\u305f\u3002<\/p>\n\n\n\nQuantum Application of Diamond<\/strong><\/h3>\n\n\n\n
Surface engineering to stabilize nitrogen vacancy centers at diamond near-surface region (Previous)<\/h4>\n\n\n\n
Appl. Phys. Express, 10, 055503 (2017),\u00a0Jpn. J. Appl. Phys., 56, 4S, 04CK08\/1-7 (2017).<\/p>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"